MEMS铁磁磁场传感器的研究 .pdfVIP

学兔兔 第31卷 第7期 仪 器 仪 表 学 报 Vo1_31 No．7 2010年7月 Chinese Journal of Scientific Instrument Ju1．2010 MEMS铁磁磁场传感器的研究 杜广涛，陈向东，林其斌，李 辉，郭辉辉 (西南交迎 、： 息科学与技术学院 成都 610031) 摘 要：提出了一种新型的基于si压阻效应的铁磁体MEMS磁场传感器结构，其结构由制作在硅桥敏感膜表面的惠斯通电桥 和在膜中问旋涂环氧胶沾上铁磁体制成。铁磁体在外磁场中磁化产生磁力，磁力耦合到硅桥敏感膜上会产生应力使膜上的惠 斯通电桥产生电压输出以达到测量磁场的目的。文章先通过有限元软件对铁磁体在磁场中的受力大小和磁场传感器在磁力下 的输出进行了仿真，然后对该结构进行了测试，仿真结果和文验结果较接近。实验测得该传感器最大灵敏度为7O mv／T，分辨 率为330 txT。该磁场传感器结构简单、工艺成熟、成本低，易于大批量生产。 关键词：压阻效应；磁场传感器；铁磁体；MEMS；磁力 中图分类号：TP212 文献标识码：A 国家标准学科分类代码：510．30 Study OU MEMS ferromagnetic magnetic field sensors Du Guangtao，Chen Xiangdong，Lin Qibin，Li Hui，Guo Huihui (School of Information ScienceTechnology，Southwest Jiaotong University，Chengdu 610031，China) Abstract：A novel MEMS magnetic field sensor is proposed based on piezoresistive effect，which is composed of a sil— icon sensitivity diaphragm of silicon bridge，an embedded piezoresistive Wheatstone bridge and a ferromagnetic mag— net adhered on the silicon diaphragm．When the bridge is subjected to an external magnetic field to be measured，the magnetic force bends the silicon sensitive diaphragm，thereby produces a stress that causes a piezoresistance change in the Wheatston bridge．So the magnetic field intensity can be measured by the output voltage of the Wheatstone bridge．The sensor has been simulated using finite element software too1．The paper compares the result obtained from the simulation with the response from the test．Experiment results demonstrate that the maximum sensitivity and resolution of the sensor are 70 mV／T and 330 IxT，respectively．The proposed magnetic field sensor features s