ICP刻蚀机反应腔室气流仿真研究_程嘉.pdf

D I :10.13290/j.cnki.bdtjs.2007.01.011 ICP 程嘉, 朱煜 (清华大学精密仪器与机械学系制造工程研究所, 北京100084 ) :感应耦合等离子体 (ICP)刻蚀机反应腔室的气流分布是影响等离子体分布与刻蚀工 艺均匀性的重要原 之一。使用商业软件CFD-ACE+中的连续流体与热传递模型, 对反应腔室 3 中气流分布进行了仿真研究, 讨论了不同质量流量 (50 ～250 cm /min)入口条件下电极表面附近 气压分布情况, 同时讨论了不同腔室高度 (H=0.08, 0.12, 0.14m)对气流分布均匀性的影响。 研究发现电极表面附近气压分布呈现中心高边缘低的特征, 并随入口质量流量的增加而升高;气 流分布均匀性随腔室高度增加而有所提高, 而同时平均密度却会下降。通过对比发现3D 与2D 模型仿真结果基本一致。 :感应耦合等离子体;计算流体力学软件;气压分布 :TN405.982;TN305.7 　　:A 　　:1003-353X (2007)01-0043-04 Gas Flow Simulation Research on Reaction Chamber of ICP Etcher CHENG Jia, ZHU Yu (Department of Precision Instruments and Mechanology, Tsinghua University, Beijing 100084, China) Abstract:Ga flow di tribution of reaction chamber of inductively coupled pla ma (ICP )etcher i u ually con idered to be a main factor in determining both the pla ma di tribution and etching uniformity.Ba ed on the continuum fluid and heat tran fer model of the commercial oftware, CFD-ACE +, the ga flow di tribution of the reaction chamber wa imulated.And then the patial di tribution profile of the pre ure 3 above the electrode urface under the different ma flow (50 ～ 250cm /min)inlet condition , and the influence of the different height (H=0.08, 0.12, 0.14m)of the chamber on the ga flow uniformity were di cu ed.The re ult how that the pre ure di tribution above the electrode ha the character which the pre ure i higher in the center of the electrode and lower at the edge and increa e with the ri e of the ma flow of inlet.And the uniformity of the ga flow di tribution i enhanced with the ri e of the height of the chamber while the average den ity decrea e .A compari on of the imul