(0 0 0 1) oriented GaN epilayer grown on sapphire by MOCVD.pdf

Journal of Crystal Growth 231 (2001) 41–47 % (0 0 0 1) oriented GaN epilayer grown on ð1 1 2 0Þ sapphire by MOCVD a, c b a a,b J. Bai *, T. Wang , H.D. Li , N. Jiang , S. Sakai a Department of Electrical and Electronic Engineering, University of Tokushima, 2-1 Minamijosanjima, Tokushima 770-8506, Japan b Satellite Venture Business Laboratory, University of Tokushima, Minami-josanjima, Tokushima 770-8506, Japan c Nitride Semiconductors, Tokushima, Japan Received 12 April 2001; accepted 22 April 2001 Communicated by M. Schieber Abstract % Since the major advantage of ð1 1 2 0Þ sapphire substrate is the ability to easily form cleaved facets, which is important % for the fabrication of edge-emitting lasers, it is meaningful to investigate the GaN epilayer grown on ð1 1 2 0Þ sapphire substrate. X-ray diffraction (XRD) measurement indicates that the GaN growth is still along (0 0 0 1) direction even on % ð1 1 2 0Þ sapphire substrate. However, compared with the GaN grown on (0 0 0 1) sapphire substrate, the GaN layer on % ð1 1 2 0Þ sapphire substrate shows a larger c-axis lattice constant and smaller a-axis lattice constant, which indicates that there exists an enhanced lattice-mismat