Carbon Nanotubes Based 3-D Matrix for Enabling Three-Dimensional Nano-Magneto-Electronics 英文参考文献.docVIP

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Carbon Nanotubes Based 3-D Matrix for Enabling Three-Dimensional Nano-Magneto-Electronics 英文参考文献.doc

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Carbon Nanotubes Based 3-D Matrix for Enabling Three-Dimensional Nano-Magneto-Electronics 英文参考文献

CarbonNanotubesBased3-DMatrixforEnablingThree- DimensionalNano-Magneto-Electronics JeongminHong1*,EugeniaStefanescu1,PingLiang2,NikhilJoshi3,SongXue4,DmitriLitvinov5, SakhratKhizroev1 1DepartmentofElectricalandComputerEngineering,FloridaInternationalUniversity,Miami,Florida,UnitedStatesofAmerica,2DepartmentofElectricalEngineering, University of California Riverside, Riverside, California, United States of America, 3Seagate Technology, Bloomington, Minnesota, United States of America, 4MultiDimension,SanJose,California,UnitedStatesofAmerica,5DepartmentofElectricalEngineering,UniversityofHouston,Houston,Texas,UnitedStatesofAmerica Abstract Thisletterdescribestheuseofverticallyalignedcarbonnanotubes(CNT)-basedarrayswithestimated2-nmthickcobalt (Co)nanoparticlesdepositedinsideindividualtubestounravelthepossibilityofusingtheuniquetemplatesforultra-high- densitylow-energy3-Dnano-magneto-electronicdevices.Thepresenceoforiented2-nmthickColayerswithinindividual nanotubes in the CNT-based 3-D matrix is confirmed through VSM measurements as well as an energy-dispersive X-ray spectroscopy(EDS). Citation: Hong J, Stefanescu E, Liang P, Joshi N, Xue S, et al. (2012) Carbon Nanotubes Based 3-D Matrix for Enabling Three-Dimensional Nano-Magneto- Electronics.PLoSONE7(7):e40554.doi:10.1371/journal.pone.0040554 Editor:AristidesDocoslis,Queen’sUniversityatKingston,Canada ReceivedFebruary17,2012;AcceptedJune8,2012;PublishedJuly12,2012 Copyright: ? 2012 Hong et al. This is an open-access article distributed under the terms of the Creative Commons Attribution License, which permits unrestricteduse,distribution,andreproductioninanymedium,providedtheoriginalauthorandsourcearecredited. Funding:ThisstudywasfundedbytheNationalScienceFoundation(NSF)undercontract005084-002,DARPA/DefenseMicroelectronicsActivity(DMEA)under agreementnumberH94003-09-2-0904,andUCDiscoveryGrant(withWDC)undercontract189573.Thefundershadnoroleinstudydesign,datacollectionand analysis,decisiontopublish,orpreparationoft