10621_2008033051何明-成都信息工程大学论文管理系统.doc

分类号：U D C：D10621-(2012)1954-0 密 级：公 开编 号： 磁控溅射法制备CdTe薄膜的晶体结构研究 论文作者姓名： 何 明 申请学位专业： 应用物理学 申请学位类别： 工学学士 指导教师姓名（职称）： 杨定宇（副教授） 论文提交日期： 2012年06月01日 磁控溅射法制备CdTe薄膜的晶体结构研究 摘 要 关键词： The Research of Crystal Structure of CdTe Thin Films Prepared by Magnetron Sputtering Abstract Polycrystalline CdTe thin films have direct band structure, its band gap is 1.46eV at room temperature. Theoretically, the solar cells made by CdTe films usually get a significantly high conversion efficiency up to 29%. Moreover, the CdTe solar cells also possess several advantage, such as stable performance, radiation resistance, long life, and so on. In this paper, the CdTe films prepared by magnetron sputtering and its crystlline structure as a function of sputtering power, pressure, substrate temperature, target-substrate distance was studied, then an optimized process parameters has been suggested. XRD analysis show that the prepared films get cubic structure and the preferred growth orientation is along the (111) plane. The crystallinity, particles stress and diffraction peaks of the films changes with the process parameters, and then affecting the film optoelectronic performance. It is found that the growth of higher-quality films should deposited under the following conditions, the sputtering power of 60W, the pressure of 0.5Pa, the substrate temperature of 200° C and the target-substrate distance of 3cm. Key words: Solar cells; CdTe thin flim; Magnetron sputtering; Crystal structure 目 录 论文总页数：页 1 引言 1 2 磁控溅射法制备CdTe多晶薄膜 2 2.1 制备原理 2 2.1.1 概述 2 2.1.2 基本装置 3 2.1.3 影响薄膜属性的因素 4 2.2 制备过程 4 2.2.1 前期准备工作 4 2.2.2 镀膜过程 5 2.2.3 退火 5 3 CdTe薄膜的XRD谱分析 6 3.1 XRD原理 6 3.2 不同制备条件对CdTe薄膜晶体结构的影响 7 3.2.1 溅射功率 8 3.2.2 溅射气压 9 3.2.3 衬底温度 10 3.2.4 靶-衬间距 11 结 论 12 参考文献 13 致 谢 15 声 明 16 1 引言 随着世界人口的持续增长和经济的不断发展，对于能源供应的需求量日益增加。目前人类依赖的煤、石油、天然气等化石燃料已面临枯竭的局面。人类的能源消费活动所造成的环境污染也越来越严重，因此，开发新能源已刻不容缓。而太阳能作为一种占地球总能量99%的以上新能源，具有可再生、零污染等特点，所以我们人类应该大力开发和利用太阳能新能源，走能源可持续发展的道路，才能保证经济的繁荣发展和人类社会