影响金属薄膜沉积初期因素的有限单元法模拟.pdfVIP

Vol. 15 No.2 第 15 卷第2 期 材料科学与工艺 Apr. ， 2仪}7 2007 年4 月 MATERIALS SCIENCE TECHNOLOGY 影响金属薄膜沉积初期因素的有限单元法模拟 宋鹏1 ，陆建生1 ，周洁1 ，张德、丰1 ，杨滨2 (I昆明理工大学材料与冶金工程学院，云南昆明白鹏3;2. 昆明贵金属研究所，云南昆明 650221 ) 摘 要:利用有限单元法对影响金属薄膜瓦积初期的因素进行了计算机模拟.按膜料为民、Pt - Ru , Pt - Ti 、 Pt-Ni 、民 -Al 等五种模式，采用剧性球入射到 C 或 Si 基底，重点研究了沉积原子的半径差异比、混积原子 能量和原子入射角等参数对薄膜混积的影响，同时检验了有限3乙方法在微观领域中的合理性和适用性. 关键词:金属薄晨5 混积因素:有限单元法:计算机模拟 中图分类号:TB43 文献标tR码:A 文章编号: 1∞5 -0299(2∞17)02 -0290 -04 Finite element method simulation of atTecting factors during metal thin rllm deposition 1 1 1 1 1 SONG Peng ,LU Jian-sheng ,ZHOU Jie ,ZHANG De-feng ,YANG Bin (1.宫le Faculty of Materials and Metallurgical Enginεering ， Kunrning University of Science and Teclmolo窃， Kunming ， 65仪93 ,China. 2 Kunming lnstitute of Precious Metal , Kunming , 650221 ,China. ) Abstract: During metaI film deposition , affecting factors were simulated through finite element method ( FEM). Five models of describing the movements of the rigid spheres reached C or Si substrate such as Pt 、 Pt - Ru ,Pt - Ti 、 Pt - Ni 、 pt - Al were mainly discussed. Some important factors such as the difference ratio of different atoms radius , dynamics power of incidence particles and the incident angle , which should been co卧 side陀d in thin film deposition were discussed. And the rationality and suitability of the finite element method in micro - fields were tested. Key words: metaI自m; deposition factors; finite element method; computer sìmulation 在石墨或硅基底上沉寂相蓝的金属粒子〈如 识或膜粒子到达基底后的行为，然后建