刻蚀AlN缓冲层对硅衬底N极性n-GaN表面粗化的影响_.pdfVIP

刻蚀AlN缓冲层对硅衬底N极性n-GaN 表面粗化的影响 王光绪 陈鹏 刘军林 吴小明 莫春兰 全知觉 江风益 InfluenceofetchingAlNbufferlayeronthesurfacerougheningofN-polarn-GaNgrownonSisubstrate Wang Guang-Xu Chen Peng Liu Jun-Lin Wu Xiao-Ming Mo Chun-Lan Quan Zhi-Jue Jiang Feng-Yi 引用信息Citation: ActaPhysicaSinica, ,088501(2016) DOI: 10.7498/aps.65.088501 在线阅读Viewonline: /10.7498/aps.65.088501 当期内容Viewtableofcontents: /CN/Y2016/V65/I8 您可能感兴趣的其他文章 Articlesyoumaybeinterestedin TiO 微粒对远程荧光粉膜及白光发光二极管器件光色性能的影响 Investigation of photo-chromic properties of remote phosphor film and white light emitting diode mixed withTiO