GaN HEMT器件.pdfVIP

Recessed gate AlGaN/GaN modulation-doped field-effect transistors on sapphire T. Egawa, H. Ishikawa, M. Umeno, and T. Jimbo Citation: Applied Physics Letters 76, 121 (2000); doi: 10.1063/1.125676 View online: /10.1063/1.125676 View Table of Contents: /content/aip/journal/apl/76/1?ver=pdfcov Published by the AIP Publishing Articles you may be interested in High-power AlGaN ∕ InGaN ∕ AlGaN ∕ GaN recessed gate heterostructure field-effect transistors Ap