物联网异质整合之逻辑-记忆体以及类比式感测线-国家奈米元件实验室.PDF

5 28 - 3D IC Low-Cost and TSV-free Monolithic 3D-IC with Heterogeneous Integration of Logic, Memory and Sensor Analogy Circuitry for Internet of Things 綉 3D IC (MOSFET) 40 50% 3D IC 3D IC IO(ultra-wide-IO) 6T SRAM ReRAM 3D IC 3D IC Abstract For the first time, a CO far-infrared laser annealing (CO -FIR-LA) technology was developed 2 2 as the activation solution to enable highly heterogeneous integration without causing device degradation for TSV-free monolithic 3DIC. This process is capable to implement small-area- small-load vertical connectors, gate-first high-k/metal gate MOSFETs and non-Al metal inter- connects. Such a far-infrared laser annealing exhibits excellent selective activation capability that enables performance-enhanced stacked sub-40nm UTB-MOSFETs (Ion-enhanced over 50 %). Unlike TSV-based 3D-IC, this 3D Monolithic IC enables ultra-wide-IO connections between layers to achieve high bandwidth with less power consumption. A test chip with logic circuits, - 3D IC NANO COMMUNICATION 23 No. 2