SC8205(最新)｜锂电池保护IC.pdf

深圳市思科微电子有限公司 SHENZHEN SIKEWEI ELECTRONICS CO., LTD. SC8205(文件编号:SCIC0692) 20V N-Channel Enhancement-Mode MOSFET RDS(ON), Vgs@1.8V, Ids@2.0A = 75mΩ RDS(ON), Vgs@2.5V, Ids@3.5A = 38mΩ RDS(ON), Vgs@4.0V, Ids@4.5A = 30mΩ RDS(ON), Vgs@4.5V, Ids@4.5A = 28mΩ RDS(ON), Vgs@10V, Ids@5.0A = 25mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current handing capability Ideal for Li ion battery pack applications Internal Schematic Diagram Drain1 Drain2 Gate1 Gate2 Source1 Source2 N-Channel MOSFET Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Symbol Limit Umit Drain-Source Voltage VDS 20 V Gate-Source Voltage VGS ±12 1 Continuous Drain Current ID 6 A 2 Pulsed Drain Current