MRFE6S9060NR1;中文规格书,Datasheet资料.pdfVIP

Freescale Semiconductor Document Number: MRFE6S9060N Technical Data Rev. 1, 10/2007 RF Power Field Effect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications with MRFE6S9060NR1 frequencies up to 1000 MHz. The high gain and broadband performance of this device make