半导体制备技术简介CH05.ppt

Hong Xiao, Ph. D. www2.austin.cc.tx.us/HongXiao/Book.htm Objective List four thermal processes Describe thermal process in IC fabrication Describe thermal oxidation process Explain the advantage of RTP over furnace Relate your job or products to the processes Topics Introduction Hardware Oxidation Diffusion Annealing Post-Implantation Alloying Reflow Definition Thermal processes are the processes operate at high temperature, which is usually higher than melting point of aluminum. They are performed in the front-end of the semiconductor process, usually in high temperature furnace commonly called diffusion furnace. Introduction Advantages of Silicon Thermal Processes in IC Fabrication Horizontal Furnace Commonly used tool for thermal processes Often be called as diffusion furnace Quartz tube inside a ceramic liner called muffle Multi-tube system Source Cabinet Source Gases Oxygen Water Vapor Nitrogen Hydrogen Gas control panel Gas flow controller Gas flow meter Oxidation Sources Dry Oxygen Water vapor sources Bubblers Flash systems Hydrogen and oxygen, H2 + O2 ? H2O Chlorine sources, for minimized mobile ions in gate oxidation Anhydrous hydrogen chloride HCl Trichloroethylene (TCE), Trichloroethane (TCA) Diffusion Sources P-type dopant B2H6, burnt chocolate, sickly sweet odor Poisonous, flammable, and explosive N-type dopants PH3, rotten fish smell AsH3, garlic smell Poisonous, flammable, and explosive Purge gas N2 Deposition Sources Silicon source for poly and nitride deposition: Silane, SiH4, pyrophoric, toxic and explosive DCS, SiH2Cl2, extremely flammable Nitrogen source for nitride deposition: NH3, pungent, irritating odor, corrosive Dopants for polysilicon deposition B2H6, PH3 and AsH3 Purge gas N2 Anneal Sources High purity N2, is used for most anneal processes. H2O sometimes used as ambient for PSG or BPSG reflow. O2 is used for USG anneal after USG CMP in STI formation process. Lower grade N2 is used for idle purge. Exhaust System Removal of hazardous g