BLA6H0912-500,112;中文规格书,Datasheet资料.pdf

BLA6H0912-500 LDMOS avionics radar power transistor Rev. 04 — 10 May 2010 Product data sheet 1. Product profile 1.1 General description 500 W LDMOS power transistor intended for avionics transmitter applications in the 960 MHz to 1215 MHz range such as Mode-S, TCAS, JTIDS, DME and TACAN. Table 1. Test information Typical RF performance at T = 25 °C; t = 128 μs; δ = 10 %; I = 100 mA; in a class-AB case p Dq production test circuit. Mode of operation f VDS PL Gp ηD tr tf (MHz) (V) (W) (dB) (%) (ns) (ns) pulsed RF 960 to 1200 50 450 17 50 20 6 CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken during transport and handling. 1.2 Features and benefits Typical pulsed RF performance at a frequency of 960 MHz to 1215 MHz, a supply voltage of 50 V, an I of 100 mA, a t of 128 μs with δ of 10 %: Dq p Output power = 450 W Power gain = 17 dB Efficiency = 50 % Easy power control