EBSD 應用在低溫多晶矽薄膜之 微結構分析與研究.PDF

EBSD Microstructure Analysis of Low Temperature Poly-Si Thin Films by EBSD H.S. Huang1 M.L. Wu2 L.J. Lin3 1 2 3 (MCL/ITRI) (LTPS)(TFT) LTPS LTPS LTPS LTPS (EBSD)(PLC)(CWLC) LTPS LTPS 100 EBSDEBSD LTPSPLC 2 2 N-type 293cm /Vs P-type 154cm /Vs Abstract Low temperature poly silicon (LTPS) nowadays is the main process technology for making high perfor- mance thin film transistor (TFT) in flat plane display industries. Since the electrical properties of LTPS always depend on their microstructures, the microstructure analysis of LTPS has been considering an impor- tant issue. In this article, the sample preparation and analytical techniques of EBSD for LTPS thin films were developed. The results showed that with 100 seconds of carbon coating, good quality of Kikuchi pattern was acquired for further EBSD analysis. Two kinds of LTPS thin films made by different process technologies, PLC and CWLC, were analyzed by EBSD. Both films showed long and narrow shaped poly grains. However, PLC has more regular array of grains and highly preferred orientation, and thus obtained better carrier mobilities. / Key Words (Low Temperature Poly Silicon; LTPS) (Electron Back-scattered Diffraction; EBSD) (Kikuchi Pattern) (Carrier Mobility) (Pulsed La- ser Crystallization; PLC) (Continuous Wave Laser Crystallization; CWLC) 174238 95 10 .tw TFT (3)