脉冲控制忆阻模拟存储器 - 电子科技大学学报.PDFVIP

第40 卷 第5 期 电 子 科 技 大 学 学 报 Vol.40 No.5 20 11年9月 Journal of University of Electronic Science and Technology of China Sep. 20 11 脉冲控制忆阻模拟存储器 1 1 1 2 胡小方 ，段书凯，王丽丹，李传东 (1. 西南大学电子信息工程学院 重庆 北碚区 400715; 2. 重庆大学计算机学院 重庆 沙坪坝区 400033) 【摘要】推导了忆阻器的电荷控制和磁通量控制数学模型，在该基础上研究了其电导状态连续可变的性质和记忆功能。 提出了用脉冲控制忆阻器实现模拟信息存储的方案，通过理论分析、实验仿真验证了方案的有效性。结合交叉阵列结构，该 方案有望实现大规模模拟存储阵列，推进人工神经网络和模拟式计算机的发展。 关 键 词 模拟存储器; 交叉阵列; 电荷控制模型; 磁通量控制模型; 忆阻器 中图分类号 TM5 文献标识码 A doi:10.3969/j.issn.1001-0548.2011.05.001 Analog Memory Based on Pulse Controlled Memristor 1 1 1 2 HU Xiao-fang , DUAN Shu-kai , WANG Li-dan , and LI Chuan-dong (1. School of Electronics Information Engineering, Southwest University Beibei Chongqing 400715; 2. College of Computer Science, Chongqing University Shapingba Chongqing 400044) Abstract In this paper, the charge-controlled and flux-controlled memristor mathematical models are derived detailedly. The continuously variable conductance and memory properties of memristors are researched. An implementation scheme for analog memory using pulse controlled memristors is proposed, and its effectiveness is verified through theoretical analysis and simulation experiments. With crossbar array structure, the scheme is expected to achieve large-scale analog storage arrays, which may greatly promote the development of artificial neural networks and analog computers. Key words analog memory; crossbar array; charge-controlled memristor model; flux-controlled m