第三章 模拟电路设计(国外英语资料).docVIP

第三章 模拟电路设计(国外英语资料).doc

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第三章 模拟电路设计(国外英语资料)

第三章 模拟电路设计(国外英语资料) This article is contributed by liaoxijie Ppt documents may experience poor browsing on the WAP side. It is recommended that you first select TXT, or download the source file to the local view. The third chapter is the integrated operational amplifier The third chapter is the integrated operational amplifier The application of a brief introduction to the 3.2 operational amplifier 3.1 integrated operational amplifier in signal processing applications of operational amplifier in the signal operation 3.3 basic arithmetic circuit application of multistage amplifier basic arithmetic circuit application of multistage amplifier basic arithmetic circuit example 3.4 integrated operational amplifier integrated operational amplifier application notes application notes 3-1 brief introduction of integrated operational amplifier Integrated circuit: integrated circuit makes all components of the whole circuit in the same 1.5 directions Body substrate. Body substrate. Advantages of integrated circuits: advantages of integrated circuits: The utility model has the advantages of stable work, convenient use, small size, light weight, stable operation, convenient use, small size, light weight and small power consumption. Small power consumption. Classification of integrated circuits: classification of integrated circuits: Analog integrated circuits, digital integrated circuits, analog integrated circuits, digital integrated circuits, VLSI circuits, small, medium, large and very large scale integrated circuits; ...... Characteristics of the internal structure of 3-1-1 integrated circuits The 1. circuit component is fabricated on a chip, and the component parameter deviation square circuit element is fabricated on a chip to be consistent, and the temperature uniformity is good. To be consistent, the temperature uniformity is good. The 2. resistor element is made of silicon semiconductors, ranging in tens to thousands of resistance elements, consisting of silicon semicond

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