表单的顶端 表单的底部 [ 摘 要 ] 本研究利用旋转涂布法(spin coating .doc

表單的頂端 表單的底部 [ 摘 要 ] 本研究利用旋轉塗佈法(spin coating)將錫摻雜銦之烷氧化合物塗佈液塗佈於高分子薄膜基材而形成ITO/高分子複合材料，而高分子基材選用分子鏈中帶有羰基(C=O) 之聚對苯二甲酸乙二酯 [poly (ethylene terephthalate), PET]與聚亞醯胺 (polyimide, PI)薄膜。為了增加高分子基材與ITO之間的附著力，本研究以表面接枝的方式於PET與PI薄膜表面上接枝多面體矽氧寡聚合體(polyhedral oligomeric silsesquioxanes, POSS)。　　實驗方法先利用KOH溶液處理PET與PI薄膜使其表面開環，隨後再 以HCl溶液清洗表面使其帶有可反應性之官能基，即為羧酸基(-COOH)，接著藉由3-aminopropyltrimethoxysilane (APTMS)一端所帶胺基與高分子表面之羧酸基進行接枝反應，而另一端所帶之矽氧烷基則進行水解與縮合反應形成POSS結構，達到在高分子薄膜表面接枝 POSS結構之目的。由ATR-FTIR、XPS與Contact Angle Meter證實本實驗成功地將POSS結構接枝於PET與PI薄膜表面上，而由SEM、EDX與AFM均可以證實PET與PI表面確實批覆一層POSS結 構。　　另一方面利用溶膠-凝膠法合成高純度ITO前驅物，即錫摻雜銦之烷氧化合物，以旋轉塗佈的方式將其塗佈於經表面接枝POSS結構之PET 與PI薄膜上。由1H NMR光譜圖證實本實驗已成功地合成出錫摻雜銦之烷氧化合物，而由百格刀測試結果證實PET與PI薄膜表面接枝POSS結構確實可以增加與ITO之附著性 質。首先將ITO塗佈於PET薄膜表面上，經60 oC乾燥30 min後隨即在真空條件下以200 oC進行退火12 hr，然而由XRD與四點探針量測結果發現皆無結晶性且表面電阻率約2×108 ?/sq。另一方面，塗佈於PI薄膜表面上並經60 oC乾燥30 min後，隨即以300 oC退火12 hr，可以製備出表面電阻率為4×107 ?/sq之PI薄膜，而重覆塗佈4次之後其表面電阻率最低可達5×104 ?/sq。 [ 英文摘要 ] In this study, the indium tin alkoxide solution was coated on the polymer substrate by spin coating method to form ITO/polymer composites. Poly(ethylene terephthalate) (PET) and polyimide (PI) film containing carbonyl group (C=O) were used as substrates. In order to increase the adhesion between polymer substrate and ITO, we grafted polyhedral oligomeric silsesquioxanes (POSS) structure onto the PET and PI film by surface grafting method.　 　The PET and PI film were beforehand treated with KOH aqueous solution, and then re-treated with HCl aqueous solution to yield carboxylic group (-COOH). An amino group (-NH2) on one end of 3-aminopropyltri methoxysilane (APTMS) was used to react with carboxylic group on the surface of polymer substrate. The siloxane groups on the other end of APTMS proceeded hydrolysis and condensation reaction to produce POSS structure. That result in grafting POSS structure on the surface of polymer film. The grafting POSS structure onto the surface of PET and PI film was successfully achieved and proved by ATR-FTIR, XPS and C