MW7IC2425GNR1;MW7IC2425NBR1;MW7IC2425NR1;中文规格书,Datasheet资料.pdfVIP

Freescale Semiconductor Document Number: MW7IC2425N Technical Data Rev. 0, 3/2009 RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs MW7IC2425NR1 Designed primarily for CW large-signal output and driver applications at MW7IC2425GNR1 2450 MHz. Devices are suitable for use in industrial, medical and scientific MW7IC2425NBR1 applications. • Typical CW Performance: VDD = 28 Volts, IDQ1 = 55 mA, IDQ2 = 195 mA, Pout = 25 Watts CW, f = 2450 MHz Power Gain ó 27.7 dB Power Added Efficiency ó 43.8% 2450 MHz, 25 W CW, 28 V • Capable of Handling 10:1 VSWR, @ 28 Vdc, 2450 MHz, 25 Watts CW LATERAL N-CHANNEL Output Power RF POWER MOSFETs Features • Qualified Up to a Maximum of 28 VDD Operation • Integrated Quiescent Current Temperature Compensation with Enable/Disable Function (1) CASE 1886-01 • Integrated ESD Protection TO-270 WB-16 • Excellent Thermal Stability PLASTIC • 225°C Capable Plastic Package MW7IC24