场效应管工作原理(国外英语资料).doc

场效应管工作原理(国外英语资料) Field Effect Transistor (FET). General polarity transistor is composed of two carrier, namely the majority carrier and reverse polarity of the minority carrier to participate in conduction, so called bipolar transistor, and FET is just by the majority carrier to participate in conduction, it, in contrast to the bipolar, also known as the unipolar transistor. It belongs to the voltage control type semiconductor device, with high input resistance (108 ~ 109 Ω), low noise, low power consumption, large dynamic range, ease of integration, there is no secondary breakdown phenomenon and safe work area wide, has now become a bipolar transistor, and power transistor powerful competitors. The classification of the field effect tube Field effect tube is divided into two types: split-junction and insulator. The junction field effect tube (JFET) is named for two PN junction, and the insulate gate field effect tube (JGFET) is named for the total insulation of the grid from other electrodes. At present, the most widely used MOS field effect tube is the MOS field effect tube, or MOS tube (that is, the metal oxide semiconductor field effect tube MOSFET). In addition, there are PMOS, NMOS and VMOS power field effects tubes, and the recently developed pimos field effect tubes, VMOS power modules, etc. According to the difference of the channel semiconductor materials, the junction and the insulated gate are divided into two kinds. The field effect tube can be divided into an exhausting and enhanced type if it is divided by conduction method. The junction field effect tube is run out, and the insulated gate field effect tube is both exhausted and enhanced. Fet can be divided into junction field effect transistor and MOS field effect transistor. And the MOS field effect transistor is divided into n-groove depletion and enhancement. The P drain and enhanced four types. See below. Two, field-effect triode type nomenclature method There are two methods of naming. The first