(基于微机电的仪器原理研究生课件）MEMS-INST3a.pdf

Make Up Lecture • Properties of Silicon • PN-j unction • MOSFET • Doping process • New reading assignment will be on the web – “Introduction to Microengineering” X. zhang, MEMS in Instrument, HUST Silicon Properties • Semiconducting material – Pure silicon has high resistivity at room temp. • Two types of mobile charge carrier in silicon – Conduction ElectronsNegatively charged – Holes Positively charged • Concentration (#/cm3) of conduction electrons and holes in silicon can be modulated by – Adding impurities (doping) – Applying electric field (this is how MOS PN junction works) – Changing the temperature – irridiating by photons (photon detector) X. zhang, MEMS in Instrument, HUST Intrinsic (undoped) Silicon X. zhang, MEMS in Instrument, HUST Doped Silicon By subsituting a Si atom with a special impurity atom (III or V element), a conduction hole or electron is created X. zhang, MEMS in Instrument, HUST N-type and P-type (From Lecture 3) If N N D A n≈ N -N 2 D A p≈ n /(N -N ) i D A np, n-type silicon If N N A D p≈ N -N 2 A D n≈ n /(N -N ) i A D pn, p-type silicon X. zhang, MEMS in Instrument, HUST Current Flow there is a finite velocity of charges moving in solids velocity increases linearly with applied field X. zhang, MEMS in Instrument, HUST