simulation of memory characteristics of metal nanocrystals 金属 .pdf

Hans Journal of Nanotechnology 纳米技术, 2011, 1, 49-55 /10.12677/nat.2011.13010 Published Online November 2011 (/journal/nat) Simulation of Memory Characteristics of Metal Nanocrystals * Bei Wang, Peihong Cheng, Shihua Huang Department of Physics, Zhejiang Normal University, Jinhua Email: huangshihua@ Received: Oct. 9th, 2011; revised: Nov. 7th, 2011; accepted: Nov. 8th, 2011. Abstract: Using a transient electrical model, the charging, discharging and retentive processes in a metal nanocrystal (NC) memory were simulated. In this model, the impact of Si surface potential, Coulomb blockade effect, quantum confinement effect and thermal activation were taken into account. The NC memory with larger size can be programmed faster and has the longer retention time. The retention time increases with the increase of nanocrystal size or tunneling dielectric thickness. The program time and erase time decrease with the increase of the gate voltage or the decrease of tunneling dielectric thickness. For different metal materials, the retention time, program speed and erase speed of metal NC memory are not the same. For Pt, Au, Ni and Al, the retention time of Pt NC is the largest, and the program speed and erase speed of Al NC is the fastest. Keywords: Metal Nanocrystal Memory; Quantum Confine Effect; Coulomb Blockade Effect; Si Surface Potential; Thermal Activation 金属纳米晶存储器存储特性的模拟 王 蓓，程佩红，黄仕华* 浙江师范大学物理系，金华