- 1、本文档共9页,可阅读全部内容。
- 2、原创力文档(book118)网站文档一经付费(服务费),不意味着购买了该文档的版权,仅供个人/单位学习、研究之用,不得用于商业用途,未经授权,严禁复制、发行、汇编、翻译或者网络传播等,侵权必究。
- 3、本站所有内容均由合作方或网友上传,本站不对文档的完整性、权威性及其观点立场正确性做任何保证或承诺!文档内容仅供研究参考,付费前请自行鉴别。如您付费,意味着您自己接受本站规则且自行承担风险,本站不退款、不进行额外附加服务;查看《如何避免下载的几个坑》。如果您已付费下载过本站文档,您可以点击 这里二次下载。
- 4、如文档侵犯商业秘密、侵犯著作权、侵犯人身权等,请点击“版权申诉”(推荐),也可以打举报电话:400-050-0827(电话支持时间:9:00-18:30)。
查看更多
IRFP460详细资料
IRFP460
N - CHANNEL 500V - 0.22 Ω - 20 A - TO-247
PowerMESH MOSFET
TYPE VDSS RDS(on) ID
IRFP460 500 V 0.27 Ω 20 A
TYPICAL RDS(on) = 0.22 Ω
EXTREMELY HIGH dv/dt CAPABILITY
100% AVALANCHE TESTED
VERY LOW INTRINSIC CAPACITANCES
GATE CHARGE MINIMIZED
DESCRIPTION 3
2
This power MOSFET is designed using the 1
company’s consolidated strip layout-based MESH
TO-247
OVERLAY process. This technology matches
and improves the performances compared with
standard parts from various sources.
APPLICATIONS
HIGH CURRENT SWITCHING
UNINTERRUPTIBLE POWER SUPPLY (UPS) INTERNAL SCHEMATIC DIAGRAM
DC/DC COVERTERS FOR TELECOM,
INDUSTRIAL, AND LIGHTING EQUIPMENT.
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V DS Drain-source Voltage (VGS = 0) 500 V
V DGR Drain- gate Voltage (RGS = 20 kΩ ) 500 V
VGS Gate-source Voltage ± 20 V
ID Drain Current (continuous) at Tc = 25 o C 20 A
ID Drain Current (continuous) at Tc = 100 oC 13 A
IDM (•)
文档评论(0)