Chapter 2Basic MOS Device Physics概要1.pptVIP

Basic MOS Device PhysicsQuestions for chapter 2 (3) (13). Plot the MOS device small-signal model if the channel-length modulation and body effect are considered. (14). Describe the relationship between the output resistance ro and the channel-length modulation coefficient ?. (15). Describe the relationship between the body effect transconductance gmb and the transconductance gm. (16). What type of MOS device do we prefer to use wherever possible in the analog IC design? And why? (17). Page 39: Ex. 2.1 (18). Page 39: Ex. 2.2 (19). Page 45: Ex. 2.25 Basic MOS Device Physics 1. In analog circuit, transistors are not considered as simple switches and many of their second-order effects (二级效应） directly impact the performance. 2. As new generation of IC technologies scales the devices, these effects become more significant. Designer must often decide which effects can be neglected in a given circuit. Two reasons for studying the device physics: Basic MOS Device PhysicsMOSFET structure (1) M: metal (or high doping polysilicon); O: silicon dioxide (sometimes just call it as oxide); S: silicon An n-type MOS device: Figure 2.1 Simple view of a MOS device High doping area for omic contact (欧姆接触） Channel area (沟道区域） Minimum channel length Leff = 0.15 ?m often represents the technology nodes; Oxide thickness tox = 5nm or 50 ? often affects the threshold voltage Vt (阈值电压）and thus the power supply. These two figures play most important role in technology nodes scaling down. Basic MOS Device PhysicsMOSFET structure (2) NMOS and PMOS devices: When both NMOS and PMOS devices are needed to be placed on one chip, n-well (n阱）or p-well (p阱) is needed. Basic MOS Device PhysicsMOSFET structure (3) NMOS and PMOS symbols: For digital circuit. For analog circuit. If bulk is always tied to ground or VDD ; most used in this book. If bulk is not tied to ground or VDD . Basic MOS Device PhysicsMOS I-V Characteristics (1) Threshold Voltage (Vth): The gate voltage that the inversion