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BSR56,215;BSR57,215;BSR58,215;中文规格书,Datasheet资料
DISCRETE SEMICONDUCTORS
DATA SHEET
BSR56; BSR57; BSR58
N-channel FETs
Product specification April 1991
File under Discrete Semiconductors, SC07
/
Philips Semiconductors Product specification
N-channel FETs BSR56; BSR57; BSR58
DESCRIPTION
Symmetrical silicon n-channel
depletion type junction field-effect
transistors in a plastic microminiature
envelope intended for application in
thick and thin-film circuits. The
transistors are intended for handbook, halfpage 3
low-power, chopper or switching
applications in industrial service. d
g
s
PINNING 1 2
1 = drain Top view MAM385
2 = source
3 = gate
Note
1. Drain and source are Fig.1 Simplified outline and symbol, SOT23.
interchangeable.
Marking code
BSR56 = M4P
BSR57 = M5P
BSR58 = M6P
QUICK REFERENCE DATA
BSR56 BSR57 BSR58
Drain-source voltage ±VDS max. 40 40 40 V
Total power dissipation up to Tamb = 40 °C
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