BFG425W_npn型25 GHz的宽带晶体管DataSheet.pdf

DISCRETE SEMICONDUCTORS BFG425W NPN 25 GHz wideband transistor Product specification 1998 Mar 11 Supersedes data of 1997 Oct 28 File under Discrete Semiconductors, SC14 Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING • Very high power gain PIN DESCRIPTION • Low noise figure 1 emitter • High transition frequency 2 base • Emitter is thermal lead 3 emitter • Low feedback capacitance. 4 collector APPLICATIONS • RF front end • Wideband applications, e.g. analog and digital cellular handbook, halfpage 3 4 telephones, cordless telephones (PHS, DECT, etc.) • Radar detectors • Pagers • Satellite television tuners (SATV) 2 1 • High frequency oscillators. Top view MSB842 DESCRIPTION Marking code: P5. NPN double polysilicon wideband transistor with buried layer for low voltage applications in a plastic, 4-pin Fig.1 Simplified outline SOT343R. dual-emitter SOT343R package. QUICK REFERENCE DATA SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT VCBO collector-base voltage open emitter