F等离子体处理增强型及耗尽型AlGaN_GaN+HEMT集成的D触发器.pdfVIP

Vol. 32,No. 6 JournalofSemiconductors June2011 Monolithicallyintegrated enhancement/depletion-modeAlGaN/GaNHEMT Dflip-flop using fluorine plasma treatment Xie Yuanbin(谢元斌) ,Quan Si(全思),Ma Xiaohua(马晓华),Zhang Jincheng(张进城), Li Qingmin(李青民),and Hao Yue(郝跃) KeyLaboratory of WideBandgap Semiconductor Materials and Devices,InstituteofMicroelectronics,XidianUniversity, Xi’an 710071, China Abstract: Depletion-mode and enhancement-mode AlGaN/GaN HEMTs using fluorine plasma treatment were integrated on one wafer. Direct-coupled FET logic circuits, such as an E/D HEMT inverter, NAND gate and D flip-flop, were fabricated on an AlGaN/GaN heterostructure. The D flip-flop and NAND gate are demonstrated in a GaN system for the first time. The dual-gate AlGaN/GaN E-HEMT substitutes two single-gate E-HEMTs for simplifying the NAND gate and shrinking the area, integrating with a conventional AlGaN/GaN D-HEMT and demonstratingaNANDgate.E/D-modeDflip-flopwasfabricatedbyintegratingtheinvertersandtheNANDgate on the AlGaN/GaN heterostructure. At a supply voltage of 2 V, the E/D inverter shows an output logic swing of 1.7V,alogic-lownoisemarginof0.49Vandalogic-highnoisemarginof0.83V.TheNANDgateandDflip-flop showed correctlogic function demonstrating promising potential for GaN-based digital ICs. Keywords: AlGaN/GaN;fluorine plasma treatment; inverter; NAND gate; D flip-flop DOI: 10.1088/1674-4926/32/6/065001 EEACC: 2570 2. Device structureandfabrication 1. Introduction 2.1. Circuitdesign AlGaN/GaN high e