用r-dciv方法研究most过渡层影响pdf.pdf

2010 6 317 用RDCIV 方法研究MOST 过渡层影响 史振江, 陈祖辉 ( 361005) :为了研究M OS 晶体管中过渡层对于电学特性的影响,通过采用电子空 复合的直流电压电流特性方法, 改变 MOST 过渡层不同的参数, 画出其界面电子空 复合的直流电流电压特性曲线,分析比较有无过渡层曲线的变化情况来讨 论MOST 的电学性质通过分析得出过渡层对于晶体管的影响较小,在工业生产可以接受的误差范围之内, 因此在工业生 产中不必再刻意考虑过渡层对MOS 晶体管造成不利影响 :金属氧化物晶体管; 直流电压电流特性; 二氧化硅层;过渡层 :T N321 : A : 1004373X( 2010)0618104 Ef fects of MOST Transition Layer Based on RDCIV SHI Zhenjiang, HEN Zuhui ( Xiamen University, Xiamen, Xiamen, 361005, hina) Abstract: The effects of the transition layer of transistor are introduced.Weather or not the effects of the transiton layer of transistor should be considered w hen parameters of the transistor veried in the industry.The veries are simulated by computer program. The Recombination D urrentVoltage (RD IV) I / I - V curves are drew on computer. Then the effects from B Bpk GB variation at the SiO / Si interface of the dopant impurity concenttration P ,oxide thickness X and the injected minority car 2 IM OX riers V are analysed through the lineshape of the RD IV I / I - V curves. A conclusion that the effects of the transition IN B Bpk GB layer of transistor are so little that can be accepted in the industry. Keyw ords: most; RD IV; SiO layer;transition layer 2 1960 MOS , ( 1 fA= 10- 15 A) , 6 000 (R Si D IV) MOST [ 1] , , 1 , , , [6] 1 ( S Source, G Gate, D , Drain,B Basewel) , P+ Basewell [ 2] 90 nm , ; IB 1 IB , I Bpk