多孔硅气体传感器的制备及其气敏性能的研究 - 无机材料学报.pdf

71 Study on Fabrication of Porous Silicon Gas Sensor and Gas Sensing-characteristics , ,, , ( , 300072) LI ong-hai, HU Ming, SUN Feng-yun, CHEN Peng, SUN Peng (School of Electronic Information Engineering, T ianjin University, T ianjin 300072, China) : P+ , ( Porous Silicon) , ,SEM AFM PS , PS :, PS / , NO ( 01 2 - 5 - 5 10 ~ 6 10 ) : NO ;; ; 2 : T P212 : A : 1001-4381(2009) 04-0071-04 Abstract: ouble-cell electrochemical etching was used to prepare PS based on P+ type and theprinc-i ple and advantages of porous silicon gas sensor were presented. T he film morphology was character- ized by SEM and AFM. T he sensing-characteristicof PS films was studied in terms of different of po- rosities. The results show that the response/ recovery time of PS thin films decreases with increasing the current density and the PS thin film reveals excellent sensitivity and response characteristics in the - 5 - 5 presence of low concentration of 01 10 -610 NO2 gas in air. Key words: NO2 gas sensor; porous silicon; sensitivity; porosity 2 NO , , , SEM AFM , , NO2 , NO2 [ 1] NO2 - 9 106 10 , 212 10- 9[2] 1 ( PS) 20 90 - 3 , 001 10 cm P (