类比IC设计经验.pptVIP

Mix-signal MOS Design;High Speed;Device Characteristics for Analog/RF;Requirements for Analog MM/RF;Device Technology Comparison; ; ;Passive Device -- Capacitor; ; ;MM Device Concern - DC Gain;Analog Device Parameter Summary;Issues on 3.3V NFET - II;General behavior of output resistance;Drain voltage modulation w/ and w/o pocket design;Trade off of SCE VA w/ and w/o Pocket design;MM Device Concern - Matching;Impact of Nitrided Oxide on 1/f noise;Gate Oxide Scaling on 1/f Noise;UMC 0.13um 1/f Noise;UMC 0.18 substrate noise--- P+ guard ring;UMC 0.18 substrate noise--- n-well guard ring;VBJT in CMOS Analog Design;Gate-Controlled Lateral PNP BJT