酞菁氧钒有机薄膜晶体管的性能研究.pdfVIP

摘 要 面对高速发展的显示领域，有机薄膜晶体管将成为新一代柔性显示技术的核心， 如何提高场效应迁移率以及器件的稳定性已经成为了目前研究的重要课题。 本文研究了不同修饰衬底对酞菁氧钒 （VOPc ）有机薄膜晶体管的影响。通过绝缘 层表面的静态接触角、酞菁氧钒薄膜的AFM 图谱以及XRD 图谱来分析判定不同自组 装修饰层对器件 I-V 特性的影响。同时测试酞菁氧钒晶体管的空气稳定性，分析空气 中影响器件稳定性的因素。 通过研究发现，影响VOPc 薄膜生长和OTFTs 器件性能的原因既包含界面的亲疏 水性能，也包括有机硅烷中烷基链的长度及端基结构。修饰层中不含卤族元素的长链 基团能够很好地隔绝VOPc 与绝缘层之间的相互作用，并降低绝缘层表面的陷阱浓度， 利于形成大晶粒尺寸的、平整连续的、高取向度的有机半导体薄膜，从而提高内部载 流子的传输效率；VOPc 薄膜晶体管长时间存放在水氧环境下会导致器件电学参数的改 变，包括迁移率的降低和阈值电压的正向漂移。这些结论的得出对今后有机半导体薄 膜的生长、有机薄膜晶体管性能的提升以及器件的封装技术具有很好的指导意义。 关键词：酞菁氧钒 有机硅烷 薄膜形貌 稳定性 ABSTRACT Facing the rapid development of display area, organic thin film transistor will become a new generation of flexible display technology core. How to improve the field effect mobility and stability of device has become an important research subject. This paper studied the performance of vanadyl phthalocyanine organic thin film transistor with different modified substrates. The electrical characteristics of divices on various organosilane self-assembled monolayer (SAM) modified surfaces were researched, including the static contact angle of insulation layer surface, the AFM and XRD maps of vanadyl phthalocyanine thin film. And the air stability of VOPc OTFT had also been tested to analysis the factors what affact the stability of divices in the air. Through the research we found that, not only the surface hydrophobicity but also the length and type of organic capping group in organosilane SAMs affect the growth of VOPc films and OTFTs device performance. The interaction force between VOPc and insulation can be sffectively isolated by long alkyl chain group without halogen element, which can also reduce the concentration of the trap on the surface, conducive to the formation of large grain size, smooth continuous and a high degree of or