基于量子模型的碳纳米管场效应晶体管电子输运特性.PDF

第34 卷 第7 期 电 子 元 件 与 材 料 Vol.34 No.7 2015 年7 月 ELECTRONIC COMPONENTS AND MATERIALS Jul. 2015 研 究 与 试 制 基于量子模型的碳纳米管场效应晶体管电子输运特性 王 小 羊 （泰州学院，江苏 泰州 225300） 摘要: 采用量子输运模型和 NEGF 理论，自洽求解薛定谔方程和泊松方程，对类 MOS-碳纳米管场效应晶体管 的电子输运特性建模。考察了沟道长度 Lg 为 5~25 nm 时，其对器件的导通电流、阈值电压、关态泄漏电流、电流 开关比、亚阈值摆幅等性质的影响。结果表明：当Lg ≥15 nm 时，MOS-CNTFET 没有量子尺寸效应；当Lg ＜15 nm 时，器件出现短沟道效应；Lg ＜10 nm 时短沟道效应更加明显。 关键词: 碳纳米管；场效应晶体管；量子输运模型；电子输运特性；沟道长度；NEGF doi: 10.14106/ki.1001-2028.2015.07.007 中图分类号: TB383 文献标识码:A 文章编号:1001-2028 （2015 ）07-0028-03 Electron transport properties of carbon nanotube field effect transistor based on quantum model WANG Xiaoyang (Taizhou University, Taizhou 225300, Jiangshu Province, China) Abstract: Using quantum transport model and NEGF theory, self consistent solving Schrodinger equation and Poisson equation, the model of the electronic transport characteristics of the class MOS-carbon nanotube field effect transistor were built. When the channel length Lg is 5–25 nm, the impact on the devices conduction current, threshold voltage, off leakage current, current switching ratio, and sub threshold amplitude were examined. The results show that: when the Lg is greater than or equal to 15 nm, MOS-CNTFET has no quantum size effect; when the Lg is less than 15 nm, the device appears short channel effect; when the Lg is less than 10 nm, short channel effect is more obvious. Key words: carbon nanotube; field effect transistor; quantum transport model; electron transport properties; channel length; NEGF 碳纳米管（CNT ）因其特殊的结构而具有独特 MOS-CNTFET 通过控制栅极电压的大小来控制势垒 的力学、热学和电磁学性质，在纳米电子元件和光