多量子阱自电光效应器件及其负阻特性.PDF

　 1998 3 　　　　　 31　 2 　Mar. 1998 　　　　　　　 JOURNAL OF TIANJIN UNIVERSITY　　　　　　 Vol. 31　 No. 2 陈弘达　张以谟　郭维廉 () 吴荣汉　高文智　陈志标　杜　云 (, 100083) 　　研究了 Ga As/ AlGa As多量子阱结构的电场光调制特性,测量了光反射谱、光电流谱和光 电流电压特性.结果表明,在 - 特性中存在光电流负 分电阻区.由这种多量子阱材料制备的自 I V 电光效应器件( SEED)观察到明显的量子限制 Stark效应. 　,, SEED 　 TN304 - MULTIPLE QUANTUM WELL SELF ELECTRO OPTIC EFFECT DEVICESAND THE FEATURE OF NEGATIVE DIFFERENTIAL PHOTOCONDUCTANCE Chen Hongda　Zhang Yimo　G o Weilian ( School of Precisio I strume ts a d Opto-electro ics E gi eeri g, Tia ji U iversity) W Ronghan　Gao Wenzh　i Chen Zhibiao　D Y n ( I stitute of Semico ductors, Academia Si ica, Beiji g 100083) Abstract　 We have i vestigated the electric field optical modulatio of GaAs/ AlGaAs multiple ( ) . , - qua tum well M QW Reflectivity photocurre t spectroscopy a d photocurre t voltage character- istics have bee measured. The I -V curve shows th e feature of egative differe tial photoco duc- ta ce. We have successfully fabricated the self elect ro-optic effect devices ( SEEDs) based o the -- ( ) MQW p i structure a d observe the obvious qua tum co fi ed Stark effect QCSE caused by room excito absorptio . 　 , , Keywords room excito absorptio multiple qua tum w ell SEED 　　,,,( 30 m) ,, GaAs 4. 2 meV, ,, 4 K. 　　,, 1996 4 12. 1996 11 11. 　* 　 1960 ,,,. Bo r i 1960, male, Dr, post doctor of I stitute of Semico ductors Academia Si ica,