TIL113标准6脚光耦,达林顿输出,DC输入.pdfVIP

= 98-1-23 :: 11:56 = TI 5-1 TIL113 / TIL119A OPTOCOUPLERS Gallium Arsenide Diode Infrared Source Optically coupled to a Silicon N-P-N Darlington- Connected Phototransistor High Direct-Current Transfer Ratio ... 300% Minimum at 10 mA High-Voltage Electrical Isolation ... 1500-Volt Rating Plastic Dual-In-Line Package Base Lead Provided on TIL113 for Conventional Transistor Biasing No Base lead Connection on TIL119A for High-EMI Environments Typical Applications Include Remote Terminal Isolation, SCR and Triac Triggers, Mechanical Relays, and Pulse Transformers Mechanical data The package consists of a gallium arsenide infrared-emitting diode and an n-p-n silicon darlin- gton-connected phototransistor mounted on a 6-lead frame encapsulated within an electrically nonconductive plastic compound. The case will withstand soldering temperature with no defor- mation and device performance characteristics remain stable when operated in high-humidity conditions. Unit weight is approximately 0.52 grams. a b s o l u t e m a x i m u m r a t i n g s a t 2 5 o C f r e e - a i r t e m p e r a t u r e ( u n l e s s o t h e r w i s e n o t e d ) Input-to-output voltage ¡À1.5 kV Collector-Base voltage ..30 V Collector-emitter voltage (See Note 1)30 V Emitter-collector voltage .7 V Emitter-Base voltage(TIL113)7 V Input-diode reverse voltage3 V oC free-air temperature Input Diode Continuous Forward Current at (or below 25 (see Note 2) 100 mA Continuous Power Dissipation at (or below) 25oC free-air temperature Infrared-Emitting Diode (See Note 3) 150 mW