真空度的稳定和气流控制的优（Stability of vacuum degree and optimal flow control）.docVIP

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真空度的稳定和气流控制的优（Stability of vacuum degree and optimal flow control）.doc

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真空度的稳定和气流控制的优（Stability of vacuum degree and optimal flow control）

真空度的稳定和气流控制的优（Stability of vacuum degree and optimal flow control） With the development of the single crystal technology in large diameter, some problems that have not been attached to the single crystal in small diameter have become more and more obvious to the negative effects of single crystal growth. Large diameter single crystal has high stability requirements for its growth environment. In this paper, the stability of vacuum degree and the optimization of air flow control are presented in this paper to improve the yield and intrinsic quality of the single crystal growth of large diameter. Keywords: direct pull method; Large diameter single crystal; Vacuum stability; The rapid development of the silicon monocrystalline technology is driving the development of the silicon monocrystalline technology. At present, the large-scale production of large-scale direct - pull single crystal production in China has just started, and many technologies are still in the exploration stage. The large diameter single crystal with no dislocation is required to have high stability in the growth environment. This results in some factors that can destroy the stability of single crystal growth, but the negative effects on single crystal growth of large-diameter single crystal are becoming more and more obvious. During the growth of the direct - pull single crystal, the gas flow in the furnace is carried through the single crystal growing area, and the silicon oxide and impurity volatiles produced by the high temperature are carried out in a timely manner. Therefore, to maintain the stability of the single crystal furnace in vacuum value, is not influenced by outside factors, have reasonable airflow towards the protection of gas at the same time, quickly take away impurities, manufacturing industry has become the current semiconductor materials to improve equipment, improve into crystalline rate of important topic. 2. The stability of vacuum degree control the high purity argon gas i