GaN材料系列的研究进展.pdfVIP

28 2 Vol.28, 2 19984 Micr oelectronics Apr. 1998 GaN 宋登元 ( ,, 071002) 王秀山 ( ,, 100035) GaN 及其合金作为第三代半导体材料具有 一系列优异的物理和 学性质, 在光电子器件、高温大功率电子器件及高频微波器件应用方面具有广阔的前景, 已成 为当前高科技领域的研究重点。论述了这种材料的研究历史与发展现状,物理与 学 性质, 薄膜的生长方法及在光电子和微电子器件应用方面的研究进展。 半导体　GaN　光电子　微电子　微波器件 304.2 T N Advances of the Devel opment of GaN Semiconductor and Its Alloys SONG Deng- uan D ep t .El ectr ic I nf or mation E ngi neeri ng ,B aod ing ,H ebei 071002 WANG Xiu-Shan Beij i ng Rad io and Tel ev is ion Univ er si ty ,B eij ing 010035 AbstractAs the third generation of semiconductors GaN and its alloys have excellent physical, and chemical properties.It can be used in a variety of fields including optoelectronics,high-temper- ature high-power electronic devices and high frequency microwave devices. Physical and chemical properties of the new semiconductor materials and techniques for their film growth are dealt with. Progresses in the development of GaN semiconductors are reviewed. KeywordsSemiconductor,GaN,Photoelectronics,M icroelectronics, Microwave device EEACC2520 GaN 1　引　言 GaN , GaN , , , , GaN InN AlN ( AlGaN, InGaN) , , GaN ,GaN GaN : : 2 : GaN 125 GaN , GaN