三价离子掺杂56族热电材料.doc

掺杂Ag，Au，SiO2的纳米碲化铋的制备及热电性能研究 本论文以室温热电材料Bi2Te3纳米棒为研究基础,对掺杂Ag、Au、SiO2等金属和非晶的Bi2Te3纳米热电材料的热电性能做出了进一步的分析和讨论。用水热合成法制备了棒状Bi2Te3纳米热电材料,并采用低温湿化学法和Stober法制备出了掺杂Ag、Au、SiO2的Bi2Te3纳米热电材料,通过XRD、SEM、TEM和EDS等检测技术对样品的结构、微观形貌表征并分析,并研究了掺杂不同的物质和不同的含量对它们的热导率、电导率、Seebeek系数及功率因子和热电优值的影响。结果表明,掺杂后的试样与纯Bi2Te3相比,其热导率均降低,但同时电导率也降低了,不同含量的结果是不一样的,最后得到的ZT值均低于Bi2Te3的ZT值。 [38] 耿爱芳等.掺杂Ag，Au，SiO2的纳米碲化铋的制备及热电性能研究[J].CNKI. 2012 Sn掺杂Bi2Te2.7Se0.3薄膜材料的微结构及热电性能研究 添加La的Bi2Te3和Bi0.5Sb1.5Te3热电材料的电磁感应熔炼法制备及其热电性能 Cr掺杂拓扑绝缘体Sb2Te3薄膜中反常霍尔效应的调控 Cui Wanqiu eg. Studies on the structure and properties of semiconductor ceramic cooling materials[J].M.O.M.S.1993 Studies on the structure and properties of semiconductor ceramic cooling materials Abstract Thermoelectric polycrystalline ceramic materials were prepared by a new ceramic technology. Samples of p-type 72% Sb2Te3 + 25% Bi2Te3 + 3% Sb2Se3 doped with tellurium and 90% Bi2Te3 + 5% Sb2Te3 + 5% Sb2Se3 doped with Sbl3 or Agl were studied. The new ceramic cooling materials have an inhomogeneous structure, but higher mechanical strength and thermoelectric properties. The method is simpler than the Bridgman and powder metallurgy processes. Measurements of properties show that sintering temperature and time effect the thermoelectric properties of the samples. Scanning electron microscopy shows that the polycrystalline ceramic materials have an obvious layered structure. The doping of the materials was studied, including doping variety and doping concentration. The figure of merit for n-type doped with Sbl3 is 2.9 × 10?3 K?1, while that for p-type doped with tellurium is 3.1 × 10?1 K?1 Cui Wanqiu, Cheng Hao in Journal of Materials Science: Materials in Electronics(1993)