半导体器件试卷（Semiconductor device test paper）.docVIP

半导体器件试卷（Semiconductor device test paper） Semiconductor device physics Semiconductor device physical semiconductor device physics Semiconductor device physics Paper Test paper The examination paper ( (( (2 . 2) )) ) a One by one A, ,,, Fill in the blanks, Fill in the blanks to fill up the Fill in the blanks, (( (total A total of a total of A total of 24 points hoping Points, ,, Every empty Every empty empty 2 points per empty hoping Points) )) ) The production mechanism of PN junction power breakdown; 2. The purpose of heavy doping emission zone in bipolar transistor; 3. Definition of transistor feature frequency; 4. P channel drain type MOSFET threshold voltage symbol; 5. The current unsaturated leakage current in the saturated zone of MOS tube; 6. The meaning of BVCEO; The type of the MOSFET short channel effect; 8. Difference between diffusion capacitance and transition zone capacitance. The second . Second, ,,, And the paper The paper briefly describes A brief introduction, (( (total A total of a total of A total of 20 points hoping Points, ,, Each item, Every little problem 5 points for every little problem hoping Points) )) ) 1. Built-in electric field; 2. Edge effect of emitter current; 3. MOSFET eigencapacitance; 4. Cut-off frequency. three Three three Three, ,,, And this paper This paper discusses the This paper, (( (total A total of a total of A total of 24 points hoping Points, ,, Each item, Every little problem 8 points for every little question hoping Points) )) ) 1. How to improve the switching speed of the transistor? 2. Comparison of the characteristic curves of BJT common base and total output. 3. Main measures to improve the frequency characteristics of transistors. four The unevenness Four, ,,, , calculation Calculate calculate Computing ( (( (total A total of a total of A total of 32 points hoping Points) )) ) 1. Try to derive the Sah equation of MOSFET in the unsaturated zone; (the question is 10 points) 2. Derivation of long diode i-v equatio