X射线衍射仪的原理及其在高分子科学中的应用张吉东题库.pptVIP

* Total reflection → density nsample / nair = cos?sample / cos?air θair=0, nair =1,nsample= 1 – ? ? cos?c = 1 – ?; cos?c = 1 – ?c2/2 ? θc = (2 ?)1/2; ? θc ? ?1/2 Total reflection At the interface, luminous ray at which it is wholly reflected, and no portion of it transmitted. Critical angle That angle of incidence of luminous ray in total reflection ? ?’ ?’ ?’ Reflectivity Polymer 0.15o~0.18o SiO2 0.21o Si 0.22o X射线衍射表征高分子材料 Reflectivity Interference The mutual influence, under certain conditions, of two streams of light, or series of pulsations of sound, or, generally, two waves or vibrations of any kind, producing certain characteristic phenomena, as colored fringes, dark bands, or darkness, in the case of light, silence or increased intensity in sounds; Interference → thickness θm2 = m2 ?2 / 4d2 + θc2 d = ? / 2 (θm+1 - θm ) Kiessig oscillation X射线衍射表征高分子材料 EVA * Our system d = 8.8 / Δ2θ (nm) d = ? / 2 (θm+1 - θm ) Reflectivity X射线衍射表征高分子材料 Simulation Fitting Software Leptos Simplex Simulated Annealing Levenberg-Marquardt Genetic algorithm REFSIM Simplex Simulated Annealing Monte Carlo Threshold Acceptance Reflectivity X射线衍射表征高分子材料 Reflectivity X射线衍射表征高分子材料 Reflectivity Multilayer X射线衍射表征高分子材料 Reflectivity Roughness SiO2/Au Actual R 0.3nm/1.2nm R 0.0nm/0.0nm X射线衍射表征高分子材料 B.Lehr, M.Seufert, G.Wenz, G.Decher, Fabrication of poly(p-phenylene vinylene) nanoheterocomposite films via layer by layer adsorption. Supromolecular Science 1995(2)199-207 100.9、62.5、43.1、8.8 nm X射线衍射表征高分子材料 Reflectivity A.Lee, L.Hamon, Y.Holl, Y.Grohens, Density profiles in thin PMMA supported films investigated by X-ray reflectometry. Langmuir 2001(17)7664-7669 X射线衍射表征高分子材料 Reflectivity K.Kago, M.Furst, H.Matsuka, H.Yamaka, T.Seki, Direct observation of photoisomerization of a polymer monolayer on a water surface by X-ray reflectometry. Langmuir 1999(15)2237-2240 X射线衍射表征高分子材料 Concentration distribution Si X射线衍射表征高分子材料 Reflectivity Si/SiO2 Organic Semiconductor OTS/ PEDOT OTFT/pen