锰,铬铁磁性掺杂GaN的热扩散.pdfVIP

Materials Science and Engineering B 117 (2005) 292–295 Ferromagnetism in Mn and Cr doped GaN by thermal diffusion X.M. Caia,∗ ˇ ´a a b b c c , A.B. Djurisic , M.H. Xie , H. Liu , X.X. Zhang , J.J. Zhu , H. Yang a Department of Physics, The University of Hong Kong, Hong Kong, China b Department of Physics, Hong Kong University of Science and Technology, Hong Kong, China c Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China Received 2 December 2004; received in revised form 7 December 2004; accepted 18 December 2004 Abstract Doping of magnetic element Mn and Cr in GaN was achieved by thermal diffusion. The conductivity of the samples, which were all n-type, did not change significantly after the diffusion doping. X-ray diffraction measurements revealed no secondary phase in the samples. Experiments using superconducting quantum interference device (SQUID) showed that the samples were ferromagnetic at 5 and 300 K, implying the Curie temperature to be around or over 300 K, despite their n-type conductivity. © 2004 Elsevier B.V. All rights reserved. Keywords: GaN; Mn; Cr; Thermal doping; Ferromagnetism 1. Introduction theoretical prediction of high Curie temperature was based on a p-type material, whereas experimental reports have cov- The discovery of ferromagnetism in diluted magnetic ered both n-type [21–24] and p-type [25,26] alloys. For n-type semiconductors (DMS), such as InMnAs [1] and GaMnAs