A very low-noise FET input amplifier（一个非常低噪声放大器场效应晶体管的输入）.pdf

A very low-noise FET input amplifier Steven R. Jefferts Joint Institutefor LaboratoryAstrophysics, Universityof Colorado and National Institute of Standards and Technology,Boulder, Colorado 80309-0440 F. L. Walls National Institute ofStandards and Technology,Boulder, Colorado 80303 (Received 18August 1988;accepted for publication 5 March 1989) We describe the design, schematics, and performance of a very low-noiseFET cascode input amplifier.This amplifier has noise performance of lessthan 1.2n V / m and 0.25 f A / m over the 500Hz to 500kHz frequency range. With modest changes it could be extended to a wide variety of uses requiring low-noise gain in the 1 Hz to 30 MHz frequency range. INTRODUCTION A low-noise amplifier has been designed utilizing a Toshiba 2SK117 N channel J-FET as the input device in a cascode configuration. Noise measurements on this amplifier yield a low-frequency noise current of 0.25 f A / m and a voltage where K, =gm,R, and noise of less than 1.2 n V / m in the 500 Hz to 500 kHz K, =: -( g , n ~ g m 2 ) ( 1 +gmrr,1 1 region. Bloyet, Lepaisant, and Varoquaux3 suggest a figure is the gain ratio of the common source component of the of merit of the product of the noise voltage and current as cascode.K , , has additional terms arising from parasitic ca- being appropriate for amplifiers of this type. This amplifier pacitances to ground at the drain of Q, which are small at has a figure of merit of -3 x 10~ 25 W/Hz, which is almost these low frequencies and are therefore neglected here. r, ,is two orders of magnitu