体块氧化锌单晶生长的研究进展.pdfVIP

第37 卷第2 期 硅 酸 盐 学 报 Vol. 37 ，No. 2 2 0 0 9 年 2 月 JOURNAL OF THE CHINESE CERAMIC SOCIETY February，2009 综合评述 体块氧化锌单晶生长的研究进展 1,2 1 1 1 张素芳 ，姚淑华 ，王继扬 ，宋 伟 (1. 山东大学，晶体材料国家重点实验室，济南 250100 ；2. 衡水学院应用化学系，河北 衡水 053000) 摘 要：氧化锌(ZnO)是一种极其重要的半导体材料，具有宽带隙(3.37 eV)和高激子结合能(60 meV) ，适合制作短波长发光二极管和激光二极管。综述 了体块ZnO 单晶的主要生长方法：化学气相输运法、水热法、助溶剂法的原理和优缺点；着重探讨了水热法和助溶剂法的生长参数及所生长ZnO 单 晶的特征；结合KOH+H2O 体系，论述了助熔剂法的反应机理。介绍了体块ZnO 单晶中存在的缺陷及其对ZnO 性质的影响。 关键词：氧化锌单晶；化学气相输运法；水热法；助熔剂法；缺陷 中图分类号：O782 文献标志码：A 文章编号：0454–5648(2009)02–0325 –06 RESEARCH PROGRESS ON GROWING OF BULK ZnO SINGLE CRYSTAL 1,2 1 1 1 ZHANG Sufang ，YAO Shuhua ，WANG Jiyang ，SONG Wei (1. State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100; 2. Department of Applied Chemistry, Hengshui University, Hengshui 053000, Hebei, China) Abstract: Zinc oxide (ZnO) is an exceptionally important semiconductor material. Due to the wide band gap energy (3.37eV) and large exciton-binding energy (60 meV), it is suitable for making short-wavelength light-emitting diodes and laser diodes. Bulk ZnO single crystal growth methods, including chemical vapor transport, the hydrothermal process and the flux method, are summarized. The principles as well as the advantages and disadvantages of these methods are reviewed. The growth parameters and characteristics of ZnO single crystals grown by the hydrothermal and flux methods are discussed in particular. The growth process and formation mechanism of ZnO crystal in KOH+H2O molten solution is described in detail. The growth de