KDP晶体生长工艺研究 - 昆明理工大学学报.PDFVIP

33 3 ( ) V ol 33 N o3 2008 6 Journal ofK unm ing U n iversity of Sc ience and T echnology ( Sc ience and T echnology) Jun 2008 KDP 于 杰, 余 娜, 王杜娟, 卢雯婷 ( , 650093) : 利用水溶法生长了K DP 单晶体, 系统论述了晶体生长装置和工艺各 个过程 指出生长均 匀无缺陷KDP 单晶体工艺过程 的注意的事项 实验表明晶体生长过程 溶液的纯度不高, 会 造成籽晶以外的溶液体系其他部位大量成核; pH 值过高, 生长的晶体会出现楔化现象, 过低则影 响生长速率, 实验测得 pH 值为 2 2; 50 的晶体退火温度能有效消除晶体内部的热应力, 提高 晶体的光学均匀性 同时籽晶的切向温度控制的准确性等因素有效避免晶体生长过程 出现的 生长层晶面花纹等缺陷 : KDP 晶体; 晶体生长; 籽晶; 非线性光学晶体 : TQ 17 : A : 1007- 855X ( 2008) 03- 0020 - 04 R esearch on P rocedure of KDP C ry stal G row th YU J ie, YU N a, WANG Dujuan, LU W enting ( F acu lty of M a teria ls and M eta llurg ica l Eng ineer ing, Kunm ing U n iversity o f Sc ience and T echno logy, K unm ing 65009 3, Ch ina) Abs tract: W ater d isso lution m ethod is adopted to grow sing le crystal KDP T hrough the discu ssion of the e qu ipm ent and every techn ica l process, the cau ses fo r the defic iencies are ana ly zed It is shown through the re su lts th at 1 T he pur ity o f so lut ion inf lu ences the process o f crystal g row th, low purity resulting in nu c leat ion of troubled - w ater out o f the seed 2 Su ited pH is ano ther mi portan t factor in crysta l grow th, higher pH indu c ing tap er form ation, and low er pH influenc ing rate of crysta l g row th T he valu e in the exp ermi en t is 22 3 A ppropriate annea ling tem p erature ( 50 in the exp er mi ent) can elmi inate heat stress as w e ll as mi prove opt ica l un iform ity o f KDP crysta l T he accurate tem p erature can avo id the deficiency of g row th layer and crystal stripe K ey w ord s: K DP crysta;l crystal grow th; seed; non - linear optical crystal 0 K