A Mathematical Model for IGBT PERC Home（一个数学模型对IGBTPERC回家）.pdf

Asian Power Electronics Journal, Vol. 2, No. 1, Apr 2008 Agarwal V. : A Mathematical Model.. A Mathematical Model for IGBT Vineeta Agarwal Abstract - A mathematical model has been developed for an V = Constant voltage source (V) d1 IGBT by compartmenting it into two diodes, which are V = Variable voltage source (V) d2 connected in series with reverse configuration. One diode is V = Voltage between collector and emitter (V) d an ordinary diode while other is a controlled diode. The VGET = Gate emitter threshold voltage (V) performance of the controlled diode depends upon the V = Collector emitter threshold voltage (V) magnitude of gate emitter voltage and collector emitter CET voltage. A gate emitter voltage greater than gate emitter V+ = Potential at junction of two diodes ( V) threshold voltage modulates the conductivity of controlled VT = kT/q, (V). diode together with hole injection from the p+ base near the collector terminal. Parameters of these diodes are estimated I. INTRODUCTION by applying curve fitting tool and power invariance method. The validity of the model has been checked by a simulation Ever since the evolution of IGBT a number of models example. Th