Advances in high brightness semiconductor lasers（高亮度半导体激光器的发展）.pdf

Advances in high brightness semiconductor lasers R.M. Lammert, S.W. Oh, M.L. Osowski, C. Panja, P.T. Rudy, T. Stakelon and J.E. Ungar Quintessence Photonics Corporation, 15632 Roxford Street, Sylmar, CA 91342 ABSTRACT We review recent advances in high power semiconductor lasers including increased spectral brightness, increased spatial brightness, and reduced cost architectures at wavelengths from the near infrared to the eye-safe regime. Data are presented which demonstrate both edge emitter devices and high power surface emitting 2-dimensional arrays with internal gratings to narrow and stabilize the spectrum. Diodes with multimode high spatial brightness and high power single mode performance in the 808 and 976nm regime are described, and advances in high power bars at eye-safe wavelengths are presented. These devices have the potential to dramatically improve diode pumped systems and enable new direct diode applications. Keywords: Diode, laser, semiconductor, bar, stack, array 1. Introduction Conventional edge emitting high power diode lasers have been used in printing, defense, medical, and materials processing because of their compactness, low cost per Watt-hour, and excellent electrical to optical efficiency. While these high power diode lasers are broadly accepted for low brightness applications, their use has been limited due to the low spatial and spectral brightness performance, costly power scaling, and limited range of emission wavelengths. In particular, the spatial beam quality from high power diode lasers is a factor of 10-20 times lower than non-