Photodiode Characteristics and Applications （光电二极管的特性和应用）.pdfVIP

Photodiode Characteristics and Applications Photodiode Characteristics Silicon photodiodes are semiconductor devices responsive to high- n n PRINCIPLE OF OPERATION ELECTRICAL CHARACTERISTICS energy particles and photons. Photodiodes operate by absorption of photons or charged particles and generate a flow of current in an Silicon is a semiconductor with a band gap energy of 1.12 eV at A silicon photodiode can be represented by a current source in parallel external circuit, proportional to the incident power. Photodiodes can be room temperature. This is the gap between the valence band and the with an ideal diode (Figure. 3). The current source represents the current used to detect the presence or absence of minute quantities of light and conduction band. At absolute zero temperature the valence band is generated by the incident radiation, and the diode represents the p-n can be calibrated for extremely accurate measurements from