Plasma Etching Outline University of Tennessee（等离子体蚀刻轮廓田纳西大学）.pdfVIP

Plasma Etching Outline • Plasma vs. Wet Etching • The Plasma State - Plasma composition, DC RF Plasma • Plasma Etching Principles and Processes • Equipment • Advanced Plasma Systems Philip D. Rack University of Tennessee Terminology Etching - the process by which material is removed from a surface Mask Layer - Used to protect regions of the wafer surface. Examples are photoresist or an oxide layer Wet Etching - substrates are immersed in a reactive solution (etchant). The layer to be etched is removed by chemical reaction or by dissolution. The reaction products must be soluble and are carried away by the etchant solution. Dry Etching - Substrates are immersed in a reactive gas (plasma). The layer to be etched is removed by chemical reactions and/or physical means (ion bombardment). The reaction products must be volatile and are carried away in the gas stream. Anisotropic - etch rate is not equal in all directions. Isotropic - etch rate is equal in all directions. Selectivity - the ratio of etch rate of film to etch rate of substrate or mask. Aspect Ratio - ratio of depth to width of an etched feature. Philip D. Rack University of Tennessee Page 1 Why Plasma Etching? Advanced IC Fabrication with small geometries requires precise pattern transfer Geometry in the 1.0 micrometer range is common Line widths comparable to film thickness Some applications require high aspect ratio Some materials wet etch with difficulty Disposal of wastes is less costly Philip D. Rack University of Tennessee Anisotropic Etch, High Aspect Ratio