1 DIODE CHARACTERISTICS i ku（1我ku二极管特征）.PDF

EE 425 - Electronic Circuits I Laboratory 1 DIODE CHARACTERISTICS 1.1 Objectives • Understanding the characteristics of each type of diode device. • Recognizing the specification of each type of these devices. • Learning how to test the characteristics of each type of diode by using various instruments. 1.2 Basic Description The semiconductor diode is formed simply by combining two main materials, n- type and p- type. There exist many electrons in n- type material whereas p- type material has many holes. When these two materials are combined, electrons of n- type material that are close to the junction fill the holes of p-type material that are also close to the junction as shown in Fig. 1.1(a). Consequently, the region of n- type material close to the junction is turned into positive ions and the region of p- type material close to the junction is turned into negative ions as shown in Fig. 1.1(b). Fig. 1.1 Thus in the region close to the junction, the carriers (electrons holes ) are depleted, whereas only positive and negative ions can exist. This region is referred to as “Depletion Region”. The force that prohibits the electrons and holes from passing the junction due to the effect of ions in the depletion region is referred to as “barrier voltage”. The typical barrier voltage in the p-n junction of germanium (Ge) is around 0.2 ~ 0.3 V, whereas it is around 0.6 V for silicon (Si). 1 EE 425 - Electronic Circuits I Laboratory Forward Bias: As shown in Fig. 1.2, if the positive and negative terminals of the power supply are respectively connected to p and n, this connection is called “forward bias”. Fig. 1.2 If the voltage applied by forwar