原创力文档极化电场对alxga1-xngan双量子阱中子带间跃迁的光学性质的影响 influence of polarization-induced electric fields on optical properties of intersubband transitions in alxga1-xngan double quantum wells.pdfVIP
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极化电场对alxga1-xngan双量子阱中子带间跃迁的光学性质的影响 influence of polarization-induced electric fields on optical properties of intersubband transitions in alxga1-xngan double quantum wells
第27卷第3期 半导体学报 v01．27NO．3
CHINESEIOURNALOF
2006年3月 sEMICoNDuCToRs Mar，2006
Influence Electric
ofPolarization—InducedFieldson
Optical
ofIntersubbandTransitionsinAI。Gal-xN／GaN
Double Wells。
Quantum
Lei B0+，Xu Ke，and
Shuangying，ShenFujun，YangZhijian，XuZhangGuoyi
(StateKeyLaboratoryofArt讲cialMicrostructureandMesoscopicPhysics，School
ofPhysics，
100871，China)
PekingUniversity，Beijing
Alostract!Theinfluenceof electricfieldsontheelectrondistributionandthe
polarization—induced opticalproper．
tiesofimersubbandtransitions(ISBT)inAl，Ga卜；N／GaN double wells(DOws)is
coupled quantum investigated
Itisfoundthat
self．consistentcalculation the leadstoan
by polarization—inducedpotentiaIdrop asymmetricpo．
tential of even thetwowellshavethesamewidthand The
Al，Ga1xN／GaNDQWs
profile though depth polariza-
tioneffectsresultina Starkshiftbetweentheoddandevenordersubbands．thusthewave．
verylarge shortening
second
oftheISBTbetweenthefirstoddorderandthe evenorder(1
1ength
becomes duetothe
electrondistribution effects，andthe coefficicntofthe
asymmetric
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