22 Dominantly epitaxial growth of graphene on Ni (1 1 1) substrate英文教材.pdfVIP

Applied Surface Science 314 (2014) 490–499 Contents lists available at ScienceDirect Applied Surface Science j o u rn al h o m e p a g e : w w w. elsev /locate/aps usc Dominantly epitaxial growth of graphene on Ni (1 1 1) substrate Zsolt Fogarassy a , Mark H. Rümmeli b,c , Sandeep Gorantla d , Alicja Bachmatiuk b,c,d , a e a f Gergely Dobrik , Katalin Kamarás , László Péter Biró , Károly Havancsák , János L. Lábár a,∗ a Hungarian Academy of Sciences, Research Centrefor Natural Sciences, Institute for Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121 Budapest, Hungary b IBS Centerfor Integrated Nanostructure Physics, Institute for Basic Science (IBS), Daejon 305-701, Republic of Korea c Department of Energy Science, Department of Physics, Sungkyunkwan University, Suwon 440-746, Republic of Korea d Leibniz Institute for Solid State Materials Research Dresden, Helmholtzstraße 20, 01069 Dresden, Germany e Hungarian Academy of Sciences, Wigner Research Centrefor Physics, Institute for Solid State Physics and Optics, Konkoly Thege M. út 29-33, H-1121 Budapest, Hungary f Department of Materials Physics, Eötvös Loránd University, Pázmány Péter sétány 1/a., H-1117 Budapest, Hungary a r t i c l e i n f o a b s t r a c t Article history: Graphene was grown on a Ni (1 1 1) thin layer, used as a substrate. The Ni layer itself was grown on single Received 16 May 2014 crystal sapphire (0 0 0 1). Carbon was deposited by chemica