Dislocation-Free Stranski-Krastanow Growth of Ge on Si(1QQ)英文教材.pdf

VOLUME 64, NUMBER 16 PHYSICAL REVIEW LETTERS 16 APRIL 1990 Dislocation-Free Stranski-Krastanow Growth of Ge on Si(1QQ) D. J. Eaglesham and M. Cerullo A Td'c T Bell Laboratories, 600 Mountain Avenue, Murray Hill, New Jersey 07974 (Received 27 December 1989) We show that the islands formed in Stranski-Krastanow (SK) growth of Ge on Si(100) are initially dislocation free -Isla. nd formation in true SK growth should be driven by strain relaxation in large, dislocated islands. Coherent SK growth is explained in terms of elastic deformation around the islands, which partially accommodates mismatch. The limiting critical thickness, coherent SK islands h„of is shown to be higher than that for 2D growth. We demonstrate growth of dislocation-free Ge islands on = Si to a thickness of 500 A, 50 X higher than h„for 2D Ge/Si epitaxy. PACS numbers: 68.55.Ln There are three known modes of heteroepitaxial layer strain. For a system with small interface energy growth:' Frank-van der Merwe (FvdM) (Ref.